MOCVD Application --Getwick Metal
- Share
- Issue Time
- Jan 16,2019
Summary
Provide MOCVD application component quality GETWICK metal materials for you
MOCVD is in the III group and the II group elements and organic compounds V, VI element hydride as crystal growth source material on a substrate by vapor phase epitaxy on thermal decomposition reaction, thin single crystal material growth -V III, II-VI compound semiconductor and their multicomponent solid solution. Usually the crystal growth in the MOCVD system is in normal pressure or low pressure (10-100Torr) through the wall of quartz H2 (stainless steel) of the reaction chamber, the substrate temperature of 500-1200, RF induction heating graphite base (in graphite substrate above the base), H2 liquid source temperature can be controlled by drum microbubbles metal organic growth zone.